naina s emiconductor schottky barrier rectifier diode features ? fast switching ? low forward voltage drop, v f ? guard ring protection ? high surge capacity ? high efficiency, low power loss maximum ratings (t c = 25 0 c, unless otherwise noted) parameter maximum instantaneous forward voltage maximum instantaneous reverse current at rated dc v oltage electrical ratings (t c = 25 0 c, unless otherwise noted) parameter symbol repetitive peak reverse voltage v rrm dc blocking voltage v dc non-repetitive peak reverse voltage v rsm average rectified forward current (t c = 85 o c) i f(av) non-repetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz i fsm thermal & mechanical specifications (t e = 25 parameters maximum thermal resistance, junction to case operating junction temperature range storage temperature mounting torque (non-lubricated threads) approximate allowable weight emiconductor ltd. 1 schottky barrier rectifier diode do- 203ab (do c, unless otherwise noted) test conditions symbol i f = 10 a v f i f = 40 a i f = 125 a maximum instantaneous reverse current at rated dc v oltage t c = 25 o c i r t c = 100 o c c, unless otherwise noted) values units 20 v 24 v 40 a 800 a = 25 0 c, unless otherwise noted) symbol values r th(jc) t j - 65 to t stg - 65 to w 45.6 1 n5832 203ab (do -5) values units 0.36 v 0.52 v 0.98 v 20 ma 150 ma values units 1.0 0 c/w 65 to +125 0 c 65 to +125 0 c 15 in-lb 45.6 g
naina s emiconductor emiconductor ltd. 1 all dimensions in mm 1 n5832
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